[Randomized intravascular ultrasound comparison between endoprostheses with and without amorphous silicon-carbide].

Carrier transport property in the amorphous silicon / amorphous silicon carbide multilayer studied by the transient grating technique

Interface modification effect between p-type a-SiC:H and ZnO:Al in p-i-n amorphous silicon solar cells

Aluminum-doped zinc oxide (ZnO:Al) [AZO] is a good candidate to be used as a transparent conducting oxide [TCO]. For solar cells having a hydrogenated amorphous silicon carbide [a-SiC:H] or hydrogenated amorphous silicon [a-Si:H] window layer, the use of the AZO as TCO results in a deterioration of fill factor [FF], so fluorine-doped tin oxide (Sn02:F) [FTO] is usually preferred as a TCO. In th...

Interaction potential for silicon carbide: A molecular dynamics study of elastic constants and vibrational density of states for crystalline and amorphous silicon carbide

of elastic constants and vibrational density of states for crystalline and amorphous silicon carbide Priya Vashishta, Rajiv K. Kalia, and Aiichiro Nakano Collaboratory for Advanced Computing and Simulations, Department of Chemical Engineering and Materials Science, Department of Physics & Astronomy, and Department of Computer Science, University of Southern California, Los Angeles, California 9...

Interference fringe-free transmission spectroscopy of amorphous thin films

Articles you may be interested in Photoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films Amorphous silicon thin-film transistors with field-effect mobilities of 2 cm 2 / V s for electrons and 0.1 cm 2 / V s for holes Appl. Optical study of disorder and defects in hydrogenated amorphous silicon carbon alloys Appl. Effect o...

Room Temperature and Reduced Pressure Chemical Vapor Deposition of Silicon Carbide on Various Materials Surface

At room temperature, 300 K, silicon carbide film was formed using monomethylsilane gas on the reactive surface prepared using argon plasma. Entire process was performed at reduced pressure of 10 Pa in the argon plasma etcher, without a substrate transfer operation. By this process, the several-nanometer-thick amorphous thin film containing silicon-carbon bonds was obtained on various substrates...